a p10p10gh/j-hf advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -100v lower gate charge r ds(on) 500m fast switching characteristic i d -5.7a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3.85 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v + 30 -5.7 32.5 -55 to 150 total power dissipation operating junction temperature range storage temperature range total power dissipation 3 maximum thermal resistance, junction-ambient (pcb mount) 3 continuous drain current, v gs @ 10v -3.6 pulsed drain current 1 -15 thermal data parameter -55 to 150 2 rating -100 halogen-free product 201110202 1 g d s g d s to-252(h) g d s to-251(j) the to-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap10p10gj) is available for low-profile applications. advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
ap10p10gh/j-hf electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -100 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-3a - - 500 m ? v gs =-4.5v, i d =-2a - - 600 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-3a - 5 - s i dss drain-source leakage current v ds =-80v, v gs =0v - - -25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =-3a - 6 9.6 nc q gs gate-source charge v ds =-80v - 1.5 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 3.2 - nc t d(on) turn-on delay time v ds =-50v - 7 - ns t r rise time i d =-3a - 6 - ns t d(off) turn-off delay time r g =3.3 -15- ns t f fall time v gs =-10v - 4 - ns c iss input capacitance v gs =0v - 450 720 pf c oss output capacitance v ds =-25v - 40 - pf c rss reverse transfer capacitance f=1.0mhz - 30 - pf r g gate resistance f=1.0mhz - 5.6 11.2 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-3a, v gs =0v - - -1.3 v t rr reverse recovery time i s =-3a, v gs =0v, - 35 - ns q rr reverse recovery charge di/dt=-100a/s - 58 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3.surface mounted on 1 in 2 copper pad of fr4 board 2
ap10p10gh/j-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 360 380 400 420 440 460 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-2a t c =25 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-3a v g = - 10v 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 0.0 1.0 2.0 3.0 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0 2 4 6 8 10 12 14 0 4 8 12162024 -v ds , drain-to-source voltage (v) -i d , drain current (a) -10v -7.0v -6.0v -5.0v v g =-4.0v t c =25 o c 0 2 4 6 8 024681012 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c = 150 o c -10v - 7 .0v - 6 .0v - 5.0 v v g =-4.0v i d = -250ua
ap10p10gh/j-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. case temperature 4 0 2 4 6 8 10 0246810 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -3a v ds = -80v 0 100 200 300 400 500 600 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on) 0 2 4 6 8 25 50 75 100 125 150 t c , case temperature ( o c ) -i d , drain current (a) 0 1 2 3 4 5 012345678 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -5v t j =-40 o c
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